SVF10N60CFJD Overview
SVF10N60CF/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved cell and guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power...
SVF10N60CFJD Key Features
- 10A,600V,RDS(on)(typ.)=0.75@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability