SVF18N50T Key Features
- 18A,500V,RDS(on)(typ.)=0.26@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SVF18N50T
- Manufacturer: Silan Microelectronics
- Size: 515.21 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVF18N50F | 500V N-CHANNEL MOSFET |
| SVF18N50FJ | 500V N-CHANNEL MOSFET |
| SVF18N50PN | 500V N-CHANNEL MOSFET |
| SVF18N60F | 600V N-CHANNEL MOSFET |
| SVF18N60T | 600V N-CHANNEL MOSFET |
SVF18N50T Description
SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in...