SVF1N60AD
DESCRIPTION
SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
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1A,600V,RDS(on)（typ.）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF1N60AM SVF1N60AMJ SVF1N60ABTR SVF1N60AD SVF1N60ADTR SVF1N60AF SVF1N60AH Package TO-251D-3L TO-251J-3L TO-92-3L TO-252-2L TO-252-2L TO-220F-3L SOT-223-3L Marking SVF1N60AM SVF1N60AMJ 1N60A SVF1N60AD SVF1N60AD SVF1N60AF SVF1N60AH Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube...
