Datasheet4U Logo Datasheet4U.com

SVF1N60AD - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF1N60AD, a member of the SVF1N60AM 600V N-CHANNEL MOSFET family.

Description

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ. ）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

📥 Download Datasheet

Datasheet preview – SVF1N60AD

Datasheet Details

Part number SVF1N60AD
Manufacturer Silan Microelectronics
File Size 469.44 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF1N60AD Datasheet
Additional preview pages of the SVF1N60AD datasheet.

📁 Similar Datasheet

Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
Published: |