SVF1N60B
SVF1N60B is N-CHANNEL MOSFET manufactured by sapcon.
sapcon®
- Absoolute Maximum Rantings (Tc=25℃)
PARAMETER
SYMBOL VALUE UNIT
Drain-Source Voltage
VDSS
Drain Current-continuous
Drain Current-pulse Gate-Source Voltage
IDM VGSS
2.0 ±30
Power Dissipation Junction Temperature Storage Temperature
PD Tj TsTg
3.0 150 -55~+150
W ℃ ℃
N-CHANNEL MOSFET
- Electronic Characteristics(Tc=25℃)
CHARACTERISTICS SYMBOL TEST CONDITION MIN Typ MAX UNIT
Drain-Source Voltage
BVDSS ID=250uA;VGS=0V
- -V
Zero Gate Voltage Drain Current
VDS=600V,VGS=0V
IDSS
(TC=25℃）
- -
10 uA
Gate-body leakage current.forward
IGSSF VDS=0V,VGS=30V
- -
100...
