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sapcon®
●Absoolute Maximum Rantings (Tc=25℃)
PARAMETER
SYMBOL VALUE UNIT
Drain-Source Voltage
VDSS
600
V
Drain Current-continuous
ID
0.5
A
Drain Current-pulse Gate-Source Voltage
IDM VGSS
2.0 ±30
A V
Power Dissipation Junction Temperature Storage Temperature
PD Tj TsTg
3.0 150 -55~+150
W ℃ ℃
SVF1N60B
N-CHANNEL MOSFET
● Electronic Characteristics(Tc=25℃)
CHARACTERISTICS SYMBOL TEST CONDITION MIN Typ MAX UNIT
Drain-Source Voltage
BVDSS ID=250uA;VGS=0V
600
-
-V
Zero Gate Voltage Drain Current
VDS=600V,VGS=0V
IDSS
(TC=25℃）
-
-
10 uA
Gate-body leakage current.forward
IGSSF VDS=0V,VGS=30V
-
-
100 nA
Gate-body leakage current.
SVF1N60B Datasheet
