SVF1N60D Datasheet | Silan Microelectronics

SVF1N60M/MJ/N/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60M SVF1N60M SVF1N60MJ SVF1N60N SVF1N60B SVF1N60BTR SVF1N60D SVF1N60DTR Package TO-251-3L TO-251D-3L TO-251J-3L TO-126-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L Marking SVF1N60M SVF1N60M SVF1N60MJ SVF1N60N F1N60 F1N60 SVF1N60D...