| Part Number | SVF1N60B Datasheet |
|---|---|
| Manufacturer | sapcon |
| Overview | sapcon® ●Absoolute Maximum Rantings (Tc=25℃) PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDSS 600 V Drain Current-continuous ID 0.5 A Drain Current-pulse Gate-Source Voltage IDM VGSS. . |
SVF1N60B Datasheet and Specifications PDF
The SVF1N60B is a N-CHANNEL MOSFET.
| Part Number | SVF1N60B Datasheet |
|---|---|
| Description | 600V N-CHANNEL MOSFET |
| Manufacturer | Silan Microelectronics |
| Overview | SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the . ∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60M SVF1N60M SVF1N60MJ SVF1N60N SVF1N60B SVF1N60BTR SVF1N60D SVF1N60DTR Package TO-251-3L TO-251D-3L TO-251J-3L TO-126-3L TO-92-3L TO-92-3. |