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SVF3N80MJ - 800V N-CHANNEL MOSFET

Description

SVF3N80M/MJ/F/D/T/MN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 3A,800V,RDS(on)(typ. )=3.8@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF3N80MJ
Manufacturer Silan Microelectronics
File Size 659.76 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF3N80MJ Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF3N80M 800V N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF3N80M/MJ/F/D/T/MN_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/MJ/F/D/T/MN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  3A,800V,RDS(on)(typ.)=3.8@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1.Gate 1 23 TO-251J-3L 3 2.Drain 3.
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