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SVF3N80T - 800V N-CHANNEL MOSFET

Download the SVF3N80T datasheet PDF. This datasheet also covers the SVF3N80MJ variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF3N80M/MJ/F/D/T/MN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 3A,800V,RDS(on)(typ. )=3.8@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF3N80MJ-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF3N80T
Manufacturer Silan Microelectronics
File Size 659.76 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF3N80T Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVF3N80D 800V N-CHANNEL MOSFET
SVF3N80F 800V N-CHANNEL MOSFET
SVF3N80M 800V N-CHANNEL MOSFET
SVF3N80MJ 800V N-CHANNEL MOSFET
SVF3N80MN 800V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF3N80M/MJ/F/D/T/MN_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/MJ/F/D/T/MN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  3A,800V,RDS(on)(typ.)=3.8@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1.Gate 1 23 TO-251J-3L 3 2.Drain 3.
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