SVF4N80F Key Features
- 4A,800V, RDS(on)(typ.)=3.3@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SVF4N80F
- Manufacturer: Silan Microelectronics
- Size: 687.94 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVF4N80D | 800V N-CHANNEL MOSFET |
| SVF4N80K | 800V N-CHANNEL MOSFET |
| SVF4N80MJ | 800V N-CHANNEL MOSFET |
| SVF4N150F | 1500V N-CHANNEL MOSFET |
| SVF4N150P7 | 1500V N-CHANNEL MOSFET |
SVF4N80F Description
SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in...