SVF4N90F Key Features
- 4A,900V,RDS(on)(typ.)=2.7@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SVF4N90F
- Manufacturer: Silan Microelectronics
- Size: 290.01 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVF4N90DTR | 900V N-CHANNEL MOSFET |
| SVF4N90MJ | 900V N-CHANNEL MOSFET |
| SVF4N90T | 900V N-CHANNEL MOSFET |
| SVF4N150F | 1500V N-CHANNEL MOSFET |
| SVF4N150P7 | 1500V N-CHANNEL MOSFET |
SVF4N90F Description
SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in...