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SVF4N90MJ Datasheet 900V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVF4N90F/MJ/T/D_Datasheet 4A, 900V N-CHANNEL MOSFET.

Download the SVF4N90MJ datasheet PDF. This datasheet also includes the SVF4N90F variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number SVF4N90MJ
Manufacturer Silan Microelectronics
File Size 290.01 KB
Description 900V N-CHANNEL MOSFET
Download SVF4N90MJ Download (PDF)

General Description

SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • 4A,900V,RDS(on)(typ. )=2.7@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.