SVF4N90MJ Datasheet | Silan Microelectronics

Silan Microelectronics SVF4N90F/MJ/T/D_Datasheet 4A, 900V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 4A,900V,RDS(on)(typ.)=2.7@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt...