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SVF730M - 400V N-CHANNEL MOSFET

Download the SVF730M datasheet PDF. This datasheet also covers the SVF730T variant, as both devices belong to the same 400v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 6A, 400V, RDS(on)(typ)=0.66@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF730T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF730M
Manufacturer Silan Microelectronics
File Size 728.59 KB
Description 400V N-CHANNEL MOSFET
Datasheet download datasheet SVF730M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF730F/T/M/MJ_Datasheet 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A, 400V, RDS(on)(typ)=0.66@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
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