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SVF730T - 400V N-CHANNEL MOSFET

Description

SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 6A, 400V, RDS(on)（typ）=0.66@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF730T
Manufacturer Silan Microelectronics
File Size 728.59 KB
Description 400V N-CHANNEL MOSFET
Datasheet download datasheet SVF730T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF730F/T/M/MJ_Datasheet 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  6A, 400V, RDS(on)（typ）=0.66@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
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