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SVF840MJ - 500V N-CHANNEL MOSFET

Description

SVF840F/D/S/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 8A, 500V, RDS(on)(typ. )=0.68@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 123 TO-220F-3L 123 TO-251J-3L.

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Datasheet Details

Part number SVF840MJ
Manufacturer Silan Microelectronics
File Size 572.09 KB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SVF840MJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF840F/D/S/MJ_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840F/D/S/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 1 3 TO-252-2L FEATURES  8A, 500V, RDS(on)(typ.)=0.
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