Datasheet4U Logo Datasheet4U.com

SVF840FD - 500V N-CHANNEL MOSFET

General Description

SVF840F/D/S/MJ/FD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Key Features

  • 8A, 500V, RDS(on)(typ. )=0.68@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Datasheet Details

Part number SVF840FD
Manufacturer Silan Microelectronics
File Size 321.81 KB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SVF840FD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF13N50F 500V N-CHANNEL MOSFET SL
SVF13N50PN 500V N-CHANNEL MOSFET SL
SVF13N50T 500V N-CHANNEL MOSFET SL
SVF1N60B N-CHANNEL MOSFET sapcon
SVF20B14 Transient Voltage Suppressor Semiware

Other Datasheets by Silan Microelectronics

Part Number Description
SVF840F 500V N-CHANNEL MOSFET
SVF840D 500V N-CHANNEL MOSFET
SVF840MJ 500V N-CHANNEL MOSFET
SVF840S 500V N-CHANNEL MOSFET
SVF840T 500V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF840F/D/S/MJ/FD_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840F/D/S/MJ/FD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  8A, 500V, RDS(on)(typ.)=0.68@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.