SVF840MJ Datasheet | Silan Microelectronics

SVF840F/D/S/MJ_Datasheet 8A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF840F/D/S/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 1 3 TO-252-2L Features - 8A, 500V, RDS(on)(typ.)=0.68@VGS=10V - Low gate charge - Low...