| Title | |
| Description | SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES 1... |
| Features |
140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant
S1 S2 S3 G4
8D 7D 6D 5D
8 7 6 5
65 87
4 23 1
1 32 4
PDFN-8-5X6X0.95-1.27
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 60
2.5~3....
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| Datasheet |
 SVG062R8NL5 Datasheet - 361.55KB |
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