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SVS11N60FD2 - 600V DP MOS POWER TRANSISTOR

Download the SVS11N60FD2 datasheet PDF. This datasheet also covers the SVS11N60D variant, as both devices belong to the same 600v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS11N60D-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS11N60FD2
Manufacturer Silan Microelectronics
File Size 730.65 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS11N60FD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVS11N60FJD2 600V DP MOS POWER TRANSISTOR
SVS11N60KD2 600V DP MOS POWER TRANSISTOR
SVS11N60SD2 600V DP MOS POWER TRANSISTOR
SVS11N60TD2 600V DP MOS POWER TRANSISTOR
SVS11N65F TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A,600V, RDS(on)(typ.)=0.3@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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