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SVS11N60SD2 - 600V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS11N60SD2, a member of the SVS11N60D 600V DP MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet preview – SVS11N60SD2

Datasheet Details

Part number SVS11N60SD2
Manufacturer Silan Microelectronics
File Size 730.65 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS11N60SD2 Datasheet
Additional preview pages of the SVS11N60SD2 datasheet.

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Full PDF Text Transcription

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SVS11N60D/F/S/FJ/T/KD2_Datasheet 11A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A,600V, RDS(on)(typ.)=0.3@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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