SVS11N60D/F/S/FJ/T/KD2_Datasheet
11A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
11A,600V, RDS(on)(typ.)=0.3@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS11N60DD2TR
SVS11N60FD2
SVS11N60SD2
SVS11N60SD2TR
SVS11N60FJD2
SVS11N60TD2
SVS11N60KD2
Package
TO-252-2L
TO-220F-3L
TO-263-2L
TO-263-2L
TO-220FJ-3L
TO-220-3L
TO-262-3L
Marking
11N60DD2
11N60FD2
11N60SD2
11N60SD2
11N60FJD2
11N60TD2
11N60KD2
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Packing
Tape & Reel
Tube
Tube
Tape & Reel
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0
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