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SVS11N60TD2 Datasheet - Silan Microelectronics

600V DP MOS POWER TRANSISTOR

SVS11N60TD2 Features

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS11N60DD2TR SVS11N60FD2 SVS11N60SD2 SVS11N60SD2TR SVS11

SVS11N60TD2 General Description

SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal be.

SVS11N60TD2 Datasheet (730.65 KB)

Preview of SVS11N60TD2 PDF

Datasheet Details

Part number:

SVS11N60TD2

Manufacturer:

Silan Microelectronics

File Size:

730.65 KB

Description:

600v dp mos power transistor.

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SVS11N60TD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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