Datasheet Details
| Part number | SVS12N80F |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 366.92 KB |
| Description | 800V DP MOS POWER TRANSISTOR |
| Datasheet |
 SVS12N80F Datasheet
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Description
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
Features
- 12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.