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Silan Microelectronics

SVS12N80PN Datasheet Preview

SVS12N80PN Datasheet

800V DP MOS POWER TRANSISTOR

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Silan
Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
12A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
12A,800V, RDS(on)(typ.)=0.37@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
2
1 12 3
3
1.Gate 2.Drain 3.Source TO-220FJ-3L
12 3
12 3
TO-220FJH-3L
TO-3P
12 3
TO-220F-3L
1
3
TO-263-2L
NOMENCLATURE
Silan DPMOS Code of D-
Well process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A
N denotes N Channel
SVSXNXXXDX
Process breakdown logo
default: first generation process
D2: second generation process;
D3: third generation process
Packageinformation.Examp:F:TO-220F.
Nominal Voltage,using 2 digits
Example:60 denotes 600V,65 denotes 650V.
ORDERING INFORMATION
Part No.
SVS12N80F
SVS12N80FJ
SVS12N80S
SVS12N80STR
SVS12N80FJH
SVS12N80PN
Package
TO-220F-3L
TO-220FJ-3L
TO-263-2L
TO-263-2L
TO-220FJH-3L
TO-3P
Marking
SVS12N80F
SVS12N80FJ
SVS12N80S
SVS12N80S
12N80FJH
12N80
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tube
Tape&Reel
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 1 of 10




Silan Microelectronics

SVS12N80PN Datasheet Preview

SVS12N80PN Datasheet

800V DP MOS POWER TRANSISTOR

No Preview Available !

Silan
Microelectronics
SVS12N80F/FJ/S/FJH/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Ratings
Symbol
SVS12N80F/FJ/FJH SVS12N80S SVS12N80PN
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Body diode (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
800
±30
12
7.7
48
40 150
0.32 1.20
702
15
50
-55+150
-55+150
169
1.35
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVS12N80F/FJ/FJH SVS12N80S
3.13 0.83
62.5 62.5
SVS12N80PN
0.74
50
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 2 of 10


Part Number SVS12N80PN
Description 800V DP MOS POWER TRANSISTOR
Maker Silan Microelectronics
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