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SVS12N80PN - 800V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the SVS12N80PN, a member of the SVS12N80F 800V DP MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.

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Datasheet preview – SVS12N80PN

Datasheet Details

Part number SVS12N80PN
Manufacturer Silan Microelectronics
File Size 366.92 KB
Description 800V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS12N80PN Datasheet
Additional preview pages of the SVS12N80PN datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A,800V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.
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