SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS7N60FJD2
SVS7N60DD2TR
SVS7N60FD2
Package
TO-220FJ-3L
TO-252-2L
TO-220F-3L
Marking
7N60FJD2
SVS7N60DD2
SVS7N60FD2
Hazardous
substance control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape&Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
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