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SVS7N60DD2TR - 600V DP MOS POWER TRANSISTOR

Download the SVS7N60DD2TR datasheet PDF. This datasheet also covers the SVS7N60FJD2 variant, as both devices belong to the same 600v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS7N60FJD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS7N60DD2TR
Manufacturer Silan Microelectronics
File Size 483.86 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS7N60DD2TR Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVS7N60FD2 600V DP MOS POWER TRANSISTOR
SVS7N60FJD2 600V DP MOS POWER TRANSISTOR
SVS7N65D 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVS7N65DD2 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVS7N65F 650V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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