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Silan Microelectronics

SVS7N60DD2TR Datasheet Preview

SVS7N60DD2TR Datasheet

600V DP MOS POWER TRANSISTOR

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SVS7N60F(FJ)(D)D2_Datasheet
7A, 600V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DP MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
ORDERING INFORMATION
Part No.
SVS7N60FJD2
SVS7N60DD2TR
SVS7N60FD2
Package
TO-220FJ-3L
TO-252-2L
TO-220F-3L
Marking
7N60FJD2
SVS7N60DD2
SVS7N60FD2
Hazardous
substance control
Halogen free
Halogen free
Halogen free
Packing
Tube
Tape&Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 9




Silan Microelectronics

SVS7N60DD2TR Datasheet Preview

SVS7N60DD2TR Datasheet

600V DP MOS POWER TRANSISTOR

No Preview Available !

SVS7N60F(FJ)(D)D2_Datasheet
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Current Pulsed
Power Dissipation (TC=25C)
- Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Reverse diode dv/dt (Note 2)
MOSFET dv/dt ruggedness (Note 3)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
dv/dt
TJ
Tstg
Ratings
SVS7N60F/FJD2
SVS7N60DD2
600
±30
7.0
4.4
28
30 60
0.24 0.48
255
15
50
-55+150
-55+150
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVS7N60FJD2
SVS7N60DD2
4.17
2.08
62.5
62.0
Unit
V
V
A
A
W
W/C
mJ
V/ns
V/ns
C
C
Unit
C/W
C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 9


Part Number SVS7N60DD2TR
Description 600V DP MOS POWER TRANSISTOR
Maker Silan Microelectronics
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