Datasheet4U Logo Datasheet4U.com

SVS7N60FJD2 Datasheet 600V DP MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Datasheet Details

Part number SVS7N60FJD2
Manufacturer Silan Microelectronics
File Size 483.86 KB
Description 600V DP MOS POWER TRANSISTOR
Download SVS7N60FJD2 Download (PDF)

General Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR.

Key Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.