SVS7N60FJD2 Description
SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS7N60FJD2 Key Features
- 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Enhanced avalanche capability
- Extreme dv/dt rated
- High peak current capability