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SVS7N60DD2TR Datasheet 600V DP MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Download the SVS7N60DD2TR datasheet PDF. This datasheet also includes the SVS7N60FJD2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVS7N60FJD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS7N60DD2TR
Manufacturer Silan Microelectronics
File Size 483.86 KB
Description 600V DP MOS POWER TRANSISTOR
Download SVS7N60DD2TR Download (PDF)

General Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR.

Key Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.