SVS7N60FJD2 Datasheet - Silan Microelectronics

600V DP MOS POWER TRANSISTOR

SVS7N60FJD2 Features

* 7A,600V, RDS(on)(typ.)=0.48@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability ORDERING INFORMATION Part No. SVS7N60FJD2 SVS7N60DD2TR SVS7N60FD2 Package TO-220F

SVS7N60FJD2 General Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavio.

SVS7N60FJD2 Datasheet (483.86 KB)

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Datasheet Details

Part number:

SVS7N60FJD2

Manufacturer:

Silan Microelectronics

File Size:

483.86 KB

Description:

600v dp mos power transistor.

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SVS7N60FJD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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SVS7N60FJD2 Features

SVS7N60FJD2 General Description

Datasheet Details

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Description:

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