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SVS7N60FJD2 - 600V DP MOS POWER TRANSISTOR

Description

SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet Details

Part number SVS7N60FJD2
Manufacturer Silan Microelectronics
File Size 483.86 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS7N60FJD2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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