SVS7N65MJ Key Features
- 7A, 650V, RDS(on)(typ.)=0.55@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
- Part: SVS7N65MJ
- Manufacturer: Silan Microelectronics
- Size: 344.32 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVS7N65MJD2 | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| SVS7N65D | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| SVS7N65DD2 | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| SVS7N65F | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| SVS7N65FD2 | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
SVS7N65MJ Description
SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.