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SVSP7N60DE2TR - 600V DP MOS POWER TRANSISTOR

Download the SVSP7N60DE2TR datasheet PDF. This datasheet also covers the SVSP7N60FE2 variant, as both devices belong to the same 600v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP7N60FE2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP7N60DE2TR
Manufacturer Silan Microelectronics
File Size 328.87 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N60DE2TR Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVSP7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
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SVSP7N70FD2 700V DP MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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