SVT03110PL3
DESCRIPTION
SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems.
FEATURES
- -46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- 100% avalanche tested
- Pb-free lead plating
- Ro HS pliant
S1 S2 S3 G4
8D 7D 6D 5D
8 7 6 5
65 7 8
1 2 3 4
4 3 2 1
PDFN-8-3.3×3.3×0.75-0.65
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings -30
-1.0~-3.0 11 -46 51
Unit V V m A n C
ORDERING INFORMATION
Part No. SVT03110PL3TR
Package PDFN-8-3.3x3.3x0.75-0.65
Marking 0311
Hazardous Substance Control Halogen free
Packing Type Tape & Reel
HANGZHOU SILAN MICROELECTRONICS...
