SVT03110PL3 Datasheet | Silan Microelectronics

DESCRIPTION SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES - -46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 7 8 1 2 3 4 4 3 2 1 PDFN-8-3.3×3.3×0.75-0.65 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings -30 -1.0~-3.0 11 -46 51 Unit V V m A n C ORDERING INFORMATION Part No. SVT03110PL3TR Package PDFN-8-3.3x3.3x0.75-0.65 Marking 0311 Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.1 Page 1 of 9 Silan Microelectronics SVT03110PL3_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Drain-Source...