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Title
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Description
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SVT03110PL3 is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems.
FEATURES
-46A,...
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Features
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-46A, -30V, RDS(on)(typ.) =7.0m@VGS=-10V Low gate charge Low Crss Fast switching Improved dv/dt capability 100% avalanche tested Pb-free lead plating RoHS compliant
S1 S2 S3 G4
8D 7D 6D 5D
8 7 6 5
65 7 8
1 2 3 4
4 3 2 1
PDFN-8-3.3×3.3×0.75-0.65
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
R...
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Datasheet
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 SVT03110PL3 Datasheet - 329.12KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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