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SVT077R5ND - N-CHANNEL MOSFET

Download the SVT077R5ND datasheet PDF. This datasheet also covers the SVT077R5NT variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 95A, 68V, RDS(on)(typ. )=6.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVT077R5NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVT077R5ND
Manufacturer Silan Microelectronics
File Size 331.58 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT077R5ND Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVT077R5NKL N-CHANNEL MOSFET
SVT077R5NS N-CHANNEL MOSFET
SVT077R5NT N-CHANNEL MOSFET
SVT078R0NS N-CHANNEL MOSFET
SVT078R0NT N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVT077R5NT(D)(S)(KL)_Datasheet 95A, 68V N-CHANNEL MOSFET DESCRIPTION The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  95A, 68V, RDS(on)(typ.)=6.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L ORDERING INFORMATION Part No.