SVT077R5ND, SVT077R5NT Datasheet - Silan Microelectronics

SVT077R5ND N-CHANNEL MOSFET

The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is wid.

SVT077R5ND Features

* 95A, 68V, RDS(on)(typ.)=6.5m@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L ORDERING INFORMATION Part No. SVT077R5NT SVT077R5NDTR SVT077R5NS SVT077

SVT077R5NT-SilanMicroelectronics.pdf