Download the SBT10K45WS datasheet PDF.
This datasheet also covers the SBT10K45WS_Silicon variant, as both devices belong to the same small signal schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.
Features
- and Advantages:
Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability
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Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Reverse Current (Note 2) Total Capacitance
Symbol Min. Typ. Max. Unit
V(BR)R VFM IRM CT 45 350 0.07 6.0 380 0.5 mV µA pF
Test Conditions
IR=100.