SSM20G45EGJ Datasheet N-channel Insulated-Gate Bipolar Transistor

Manufacturer: Silicon Standard

Download the SSM20G45EGJ datasheet PDF. This datasheet also includes the SSM20G45EGH variant, as both parts are published together in a single manufacturer document.

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SSM20G45EGJ n-channel insulated-gate bipolar transistor by Silicon Standard - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SSM20G45EGH-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SSM20G45EGJ
Manufacturer	Silicon Standard
File Size	724.72 KB
Description	N-channel Insulated-Gate Bipolar Transistor
Download	SSM20G45EGJ Download (PDF)

General Description

The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.

The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications.

Overview

SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ.

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