SSM20G45EGH
SSM20G45EGH is N-channel Insulated-Gate Bipolar Transistor manufactured by Silicon Standard.
DESCRIPTION
The SSM20G45E acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.
The SSM20G45EGH is in a TO-252 package, which is widely used for mercial and industrial surface-mount applications.
The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
The gate has internal ESD protection.
Symbol VCES VGE V GE P ICP
Parameter Collector-emitter voltage...
