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SSM20G45EGH - N-channel Insulated-Gate Bipolar Transistor

Description

The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.

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Datasheet Details

Part number SSM20G45EGH
Manufacturer Silicon Standard
File Size 724.72 KB
Description N-channel Insulated-Gate Bipolar Transistor
Datasheet download datasheet SSM20G45EGH Datasheet
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SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ. 130A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G D S TO-251 (suffix J) G DS TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
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