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SSM20G45EGJ - N-channel Insulated-Gate Bipolar Transistor

Download the SSM20G45EGJ datasheet PDF. This datasheet also covers the SSM20G45EGH variant, as both devices belong to the same n-channel insulated-gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash.

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Note: The manufacturer provides a single datasheet file (SSM20G45EGH-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM20G45EGJ
Manufacturer Silicon Standard
File Size 724.72 KB
Description N-channel Insulated-Gate Bipolar Transistor
Datasheet download datasheet SSM20G45EGJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES V CE(sat) I CP 450V 5V typ. 130A Pb-free; RoHS-compliant TO-251 (IPAK) and TO-252 (DPAK) G D S TO-251 (suffix J) G DS TO-252 (suffix H) ABSOLUTE MAXIMUM RATINGS DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM20G45EGJ in TO-251, is available for vertical mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.