SSM20G45EGJ is N-channel Insulated-Gate Bipolar Transistor manufactured by Silicon Standard.
| Part Number | Description |
|---|---|
| SSM20G45EGH | N-channel Insulated-Gate Bipolar Transistor |
| SSM2030GM | N- and P-channel Enhancement-mode Power MOSFET |
| SSM20N03P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM20N03S | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| SSM20P02H | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
The SSM20G45E acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for use in short-duration, high-current strobe applications, such as still-camera flash. The SSM20G45EGH is in a TO-252 package, which is widely used for mercial and industrial surface-mount applications.
