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SSM2312GN Datasheet N-channel Enhancement-mode Power MOSFET

Manufacturer: Silicon Standard

Datasheet Details

Part number SSM2312GN
Manufacturer Silicon Standard
File Size 299.82 KB
Description N-channel Enhancement-mode Power MOSFET
Download SSM2312GN Download (PDF)

General Description

D G S BV DSS R DS(ON) ID D The SSM2312GN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.

This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications.

SOT-23-3 20V 50mΩ 4.3A S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘJA Parameter Maximum Thermal Resistance, Junction-ambient3 Rating 20 ± 12 4.3 3.4 10 1.38 0.01 -55 to 150 -55 to 150 Value 90 Units V V A A A W W/°C °C °C Unit °C/W 4/16/2005 Rev

Overview

SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.