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SST12CP11 - 2.4 GHz High-Power and High-Gain Power Amplifier

General Description

Date Oct 2011 Initial release of Product Brief ISBN:978-1-61341-735-5 © 2011 Silicon Storage Technology, Inc

a Microchip Technology Company.

All rights reserved.

Key Features

  • easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features.
  • High Gain:.
  • Typically 34 dB gain across 2.4.
  • 2.5 GHz Block Diagram VCC1 VCC2 VCC3.
  • High linear output power (at 5V).
  • >30 dBm P1dB.
  • Meets 802.11g OFDM ACPR requirement up to 28.5 dBm.
  • Added EVM ~3% up to 25 dBm for 54 Mbps 802.11g signal.
  • Meets 802.11b ACPR requirement up to 28.5 dBm RFIN Input.

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Datasheet Details

Part number SST12CP11
Manufacturer Silicon Storage Technology
File Size 39.94 KB
Description 2.4 GHz High-Power and High-Gain Power Amplifier
Datasheet download datasheet SST12CP11 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology Company SST12CP11 Product Brief The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The power amplifier IC also features easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features • High Gain: – Typically 34 dB gain across 2.