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SST28VF040 - (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM

Description

The SST28SF040/28LF040/28VF040 are 512K x 8 bit CMOS sector erase, byte program EEPROMs.

The SST28SF040/28LF040/28VF040 are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology.

Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for the SST28SF040.
  • 3.0-3.6V for the SST28LF040.
  • 2.7-3.6V for the SST28VF040.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Memory Organization: 512K x 8.
  • Sector Erase Capability: 256 bytes per Sector.
  • Low Power Consumption.
  • Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 3.0-3.

📥 Download Datasheet

Datasheet Details

Part number SST28VF040
Manufacturer Silicon Storage Technology
File Size 302.85 KB
Description (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM
Datasheet download datasheet SST28VF040 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4 Megabit (512K x 8) SuperFlash EEPROM SST28SF040 / SST28LF040 / SST28VF040 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST28SF040 – 3.0-3.6V for the SST28LF040 – 2.7-3.6V for the SST28VF040 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Memory Organization: 512K x 8 • Sector Erase Capability: 256 bytes per Sector • Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 3.0-3.6V/2.7-3.6V – Standby Current: 5 µA (typical) • Fast Sector Erase/Byte Program Operation – Byte Program Time: 35 µs (typical) – Sector Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) • Fast Read Access Time – 5.0V-only operation: 120 and 150 ns – 3.0-3.
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