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SST28VF040A - (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM

Download the SST28VF040A datasheet PDF. This datasheet also covers the SST28SF040A variant, as both devices belong to the same (sst28xf040a) 4 mbit (512k x8) superflash eeprom family and are provided as variant models within a single manufacturer datasheet.

Description

The SST28SF/VF040A are 512K x8 bit CMOS SectorErase, Byte-Program EEPROMs.

The SST28SF/VF040A are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology.

Features

  • Single Voltage Read and Write Operations.
  • 5.0V-only for SST28SF040A.
  • 2.7-3.6V for SST28VF040A.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Memory Organization: 512K x8.
  • Sector-Erase Capability: 256 Bytes per Sector.
  • Low Power Consumption.
  • Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V.
  • Standby Current: 5 µA (typical).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST28SF040A_SiliconStorageTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SST28VF040A
Manufacturer Silicon Storage Technology
File Size 323.44 KB
Description (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
Datasheet download datasheet SST28VF040A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4 Mbit (512K x8) SuperFlash EEPROM SST28SF040A / SST28VF040A SST28SF040A / SST28VF040A5.0 & 2.7 4Mb (x8) Byte-Program, Small Erase Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST28SF040A – 2.7-3.6V for SST28VF040A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Memory Organization: 512K x8 • Sector-Erase Capability: 256 Bytes per Sector • Low Power Consumption – Active Current: 15 mA (typical) for 5.0V and 10 mA (typical) for 2.7-3.6V – Standby Current: 5 µA (typical) • Fast Sector-Erase/Byte-Program Operation – Byte-Program Time: 35 µs (typical) – Sector-Erase Time: 2 ms (typical) – Complete Memory Rewrite: 20 sec (typical) • Fast Read Access Time – 5.
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