• Part: SST28VF040
  • Description: (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM
  • Category: EEPROM
  • Manufacturer: Silicon Storage Technology
  • Size: 302.85 KB
Download SST28VF040 Datasheet PDF
Silicon Storage Technology
SST28VF040
SST28VF040 is (SST28xF040) 4 Mbit (512K x8) SuperFlash EEPROM manufactured by Silicon Storage Technology.
FEATURES : - Single Voltage Read and Write Operations - 5.0V-only for the SST28SF040 - 3.0-3.6V for the SST28LF040 - 2.7-3.6V for the SST28VF040 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Memory Organization: 512K x 8 - Sector Erase Capability: 256 bytes per Sector - Low Power Consumption - Active Current: 15 m A (typical) for 5.0V and 10 m A (typical) for 3.0-3.6V/2.7-3.6V - Standby Current: 5 µA (typical) - Fast Sector Erase/Byte Program Operation - Byte Program Time: 35 µs (typical) - Sector Erase Time: 2 ms (typical) - plete Memory Rewrite: 20 sec (typical) - Fast Read Access Time - 5.0V-only operation: 120 and 150 ns - 3.0-3.6V operation: 200 and 250 ns - 2.7-3.6V operation: 250 and 300 ns - Latched Address and Data - Hardware and Software Data Protection - 7-Read-Cycle-Sequence Software Data Protection - End of Write Detection - Toggle Bit - Data# Polling - TTL I/O patibility - JEDEC Standard - Flash EEPROM Pinouts - Packages Available - 32-Pin PDIP - 32-Pin PLCC - 32-Pin TSOP (8mm x 20mm) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PRODUCT DESCRIPTION The SST28SF040/28LF040/28VF040 are 512K x 8 bit CMOS sector erase, byte program EEPROMs. The SST28SF040/28LF040/28VF040 are manufactured using SST’s proprietary, high performance CMOS Super Flash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternative approaches. The SST28SF040/28LF040/28VF040 erase and program with a single power supply. The SST28SF040/28LF040/28VF040 conform to JEDEC standard pinouts for byte wide memories and are patible with existing industry standard EPROM, and flash EEPROM pinouts. Featuring high performance programming, the SST28SF040/28LF040/28VF040 typically byte program in 35 µs. The SST28SF040/28LF040/28VF040 typically sector erase in 2 ms. Both program and erase times can be optimized using interface features such as Toggle bit or...