SST28VF040 Overview
The SST28SF040/28LF040/28VF040 are 512K x 8 bit CMOS sector erase, byte program EEPROMs. The SST28SF040/28LF040/28VF040 are manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternative approaches.
SST28VF040 Key Features
- Single Voltage Read and Write Operations
- 5.0V-only for the SST28SF040
- 3.0-3.6V for the SST28LF040
- 2.7-3.6V for the SST28VF040
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Memory Organization: 512K x 8
- Sector Erase Capability: 256 bytes per Sector
- Low Power Consumption