SST34HF3243B
FEATURES
:
- Flash Organization: Two 1M x16
- Quad-Bank Architecture for Concurrent Read-While-Write Operation
- 12 Mbit + 4 Mbit + 12 Mbit + 4 Mbit
- SRAM Organization:
- 2 Mbit: 256K x8 or 128K x16
- 4 Mbit: 512K x8 or 256K x16
- Single 2.7-3.3V Read-While-Write Operations
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption:
- Active Current: 35 m A (typical)
- Standby Current: 25 µA (typical)
- Sector-Erase Capability
- Uniform 1 KWord sectors
- Block-Erase Capability
- Uniform 32 KWord blocks
- Read Access Time
- Flash: 70 and 90 ns
- SRAM: 70 and 90 ns
- Latched Address and Data
- Fast Erase and Word-Program:
- Sector-Erase Time: 18 ms (typical)
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 70 ms (typical)
- Word-Program Time: 14 µs (typical)
- Chip Rewrite Time: 30 seconds (typical)
- Automatic Write Timing
- Internal VPP Generation
- End-of-Write Detection
- Toggle Bit
- Data# Polling
- CMOS I/O...
