SST39VF800A Overview
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply.
SST39VF800A Key Features
- Organized as 128K x16 / 256K x16 / 512K x16
- Single Voltage Read and Write Operations
- 3.0-3.6V for SST39LF200A/400A/800A
- 2.7-3.6V for SST39VF200A/400A/800A
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 14 MHz)
- Active Current: 9 mA (typical)
- Standby Current: 3 µA (typical)