Full PDF Text Transcription for 2N3956 (Reference)
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2N3956. For precise diagrams, and layout, please refer to the original PDF.
.monolithic dual n-channel JFETs H Siliconix Performance Curves NQP See Section 4 designed for • • • • Low and Medium Frequency DiHerential Amplifiers • High Input Impeda...
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• Low and Medium Frequency DiHerential Amplifiers • High Input Impedance Amplifiers *ABSOLUTE MAXIMUM RATINGS (25°C) BENEFITS • Wide Dynamic Range IG Specified @ V DS = 20 V • Low Capacitance Ciss <4 pF TO·71 Sea Section 6 Any Lead-To-Case Voltage .................... ±100 V Gate:Orail1 OJ Gate·~ource Voltage ............•.. -50 V Gate Current ............................. " 50 rnA Total Device Dissipation at (Each Side) .............250 mW 85°C Case Temperature (Both Sides) ............ 500 mW Power Derating (Each Side) ................ 2.86 mWrC (Both Sides) .........•...... 4.3 mWrC Storage Temperature Range ..........
2N3956 Datasheet
