The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
A
a
Process 83
2N3956-58 N-Channel Monolithic Dual JFETs
General Description
The 2N3956 thru 2N3958 series of N-channel monolithic dual JFETs is designed for low to medium frequency
differential amplifier applications requiring tight match,
low noise and high common-mode rejection.
Absolute Maximum Ratings (250
Gate-Drain or Gate- Source Voltage
—50V
Gate-to-Gate Voltage
Gate Current
Total Device Dissipation 85°C {Each Side)
Case Temperature
{Both Sides)
-5QV
50 mA 250 mW 500 mW
Power Derating (Each Side)
2.86 mW/~C
(Both Sides)
4.3 mW/'X
Storage Temperature Range
-65°C to +200X
Lead Temperature (1/16" from case for 10 seconds)
300X
0.175-0 195 (4.445-4.953.
SEATING PLANE
0.209-0.23D (5.309 5.842)
0.170 0.210 ilU~"i.32t)
i
fflDin .
0.01^0 -G 01 9 __
Q.
2N3956 Datasheet
