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.monolithic dual
n-channel JFETs
H
Siliconix Performance Curves NQP See Section 4
designed for • • •
• Low and Medium Frequency DiHerential Amplifiers
• High Input Impedance Amplifiers
*ABSOLUTE MAXIMUM RATINGS (25°C)
BENEFITS
• Wide Dynamic Range IG Specified @ V DS = 20 V
• Low Capacitance Ciss <4 pF
TO·71 Sea Section 6
Any Lead-To-Case Voltage .................... ±100 V Gate:Orail1 OJ Gate·~ource Voltage ............•.. -50 V Gate Current ............................. " 50 rnA Total Device Dissipation at (Each Side) .............250 mW
85°C Case Temperature (Both Sides) ............ 500 mW
Power Derating (Each Side) ................ 2.86 mWrC (Both Sides) .........•...... 4.3 mWrC
Storage Temperature Range ..............
2N3956 Datasheet
