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2N555 - PNP germanium power transistors (Motorola)
2N 178 (GERMANIUM) 2N554 2N555 ~ PNP germanium power transistor for non-critical power amplifier and power switching applications re- CASE 11 (TO-.

2N5550 - Amplifier Transistor (ON Semiconductor)
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter V.

2N5550S - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V L.

2N5551 - Silicon NPN Transistor (NTE)
2N5550 & 2N5551 Silicon NPN Transistor Audio Power Amplifier TO−92 Type Package Description: The 2N5550 and 2N5551 is a silicon NPN amplifier transis.

2N5551BU - NPN Amplifier (ON Semiconductor)
2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig.

2N5551C - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.

2N5551HR - Hi-Rel NPN bipolar transistor (STMicroelectronics)
2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B .

2N5551S - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.

2N5551SC - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V L.

2N5551TA - NPN Amplifier (ON Semiconductor)
2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is desig.