Datasheet4U.com

VQ2001J - P-Channel Enhancement-Mode MOS Transistors

Siliconix

📥 Download Datasheet

VQ2001J Datasheet Preview — Preview of VQ2001J PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	VQ2001J
Manufacturer	Siliconix
File Size	68.61 KB
Description	P-Channel Enhancement-Mode MOS Transistors
Datasheet	VQ2001J-Siliconix.pdf

VQ2001J Product details

Features

D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:.
3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer.

📁 VQ2001J Similar Datasheet

Other Datasheets by Siliconix

VQ2001 - P-Channel Enhancement-Mode MOS Transistor
VQ2001P - P-Channel Enhancement-Mode MOS Transistors
VQ2000 - P-Channel Enhancement-Mode MOS Transistor
VQ2004 - P-Channel Enhancement-Mode MOS Transistor
VQ2006 - P-Channel Enhancement-Mode MOS Transistor

Published: Dec 6, 2018 |