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VQ2001P - P-Channel Enhancement-Mode MOSFET Transistors

Key Features

  • D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold:.
  • 3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF.

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Datasheet Details

Part number VQ2001P
Manufacturer Vishay
File Size 39.66 KB
Description P-Channel Enhancement-Mode MOSFET Transistors
Datasheet download datasheet VQ2001P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VP0300L VP0300LS VQ2001J VQ2001P V(BR)DSS Min (V) –30 rDS(on) Max (W) 2.5 @ VGS = –12 V 2.5 @ VGS = –12 V 2 @ VGS = –12 V 2 @ VGS = –12 V VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 ID (A) –0.32 –0.5 –0.6 –0.6 FEATURES D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switching D Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.