VQ2001 Datasheet PDF

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Vos Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 Power Dissipation - Single Power Dissipation - Quad TA= 25°C 10 TA= 100°C 10M TA= 25°C TA= 100°C Po TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Tj. Tstg h VQ2001J -30 VQ2001P -30 ±30 -0.6 -0.12 ±20 -0.6 -0.12 ±2 ±2 1.3 1.3 0.52 0.52 2 2 0.8 0.8 -55 to 150 300 UNITS V A W °C THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL Junction-to-Ambient - Single Junction-to-Ambient - Quad RthJA 1Pulse width limited by maximum junction temperature. VQ2001J 96.2 62.5 VQ2001P 96.2 62.5 UNITS °C/W 6-128 g Siliconix inccrpcr.ated

ELECTRICAL CHARACTERISTICS

1 VQ2001 SERIES LIMITS VQ2001 PARAMETER SYMBOL TEST CONDITIONS TYp2 MIN MAX UNIT STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-Sta...