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SSF2112H2 - MOSFET

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for buttery protection, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature SSF2112H2  43 21 5 678 D1 S1 S1 28121025HA2 G1 D2 S2 S2 G1 G2 D1 G2 S1 D2 S2 Marking and pin Assignment  Schematic diagram       .

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Datasheet Details

Part number SSF2112H2
Manufacturer Silikron
File Size 594.75 KB
Description MOSFET
Datasheet download datasheet SSF2112H2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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                                 Main Product Characteristics: VDSS 20V RDS(on) 10mohm(typ.) ID 8A TSSOP-8  Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for buttery protection, load switching and general power management „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF2112H2  43 21 5 678 D1 S1 S1 28121025HA2 G1 D2 S2 S2 G1 G2 D1 G2 S1 D2 S2 Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.