Datasheet Details
| Part number | SSF20N50UH |
|---|---|
| Manufacturer | Silikron |
| File Size | 436.62 KB |
| Description | MOSFET |
| Datasheet | SSF20N50UH-Silikron.pdf |
|
|
Overview: Main Product Characteristics VDSS RDS(on) ID 500V 0.2Ω (typ.
| Part number | SSF20N50UH |
|---|---|
| Manufacturer | Silikron |
| File Size | 436.62 KB |
| Description | MOSFET |
| Datasheet | SSF20N50UH-Silikron.pdf |
|
|
|
These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency switch mode power supplies.
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